Description

RJP30H2A is Silicon N-Channel IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter voltage : VCES = 360 V

2. Gate to Emitter voltage : VGES = ±30 V

3. Collector current : Ic = 35 A

4. Collector peak current : ic(peak) = 250 A

5. Collector dissipation : PC = 60 W

6. Junction to case thermal impedance : θj-c = 2.08 °C/ W

7. Junction temperature : Tj = 150 °C

Applications

1. High speed power switching