SMK0825 TO252

Type Designator: SMK0825D2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 130 W
|Maximum Drain-Source Voltage: 250 V
| Maximum Gate-Source Voltage: 30 V
| Maximum Gate-Threshold Voltage: 4 V
| Maximum Drain Current: 8 A
Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 14.5 nC
– Rise Time: 85 nS
Output Capacitance: 141 pF
– Maximum Drain-Source On-State Resistance: 0.43 Ohm
Package: TO25