P1504EDG TO252
P1504EDG P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID15m @VGS = -10V-45A-40V100% Rg tested100% UIS testedTO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40 VVGSGate-Source Voltage 20 VTA= 25 C-45IDContinuous Drain CurrentTA= 70
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توضیحات
Type Designator: P1504EDG Type of Transistor: MOSFET Type of Control Channel: P -Channel
Maximum Power Dissipation: 50 W Maximum Drain-Source Voltage: 40 V Maximum Gate-Source Voltage: 20 Maximum Gate-Threshold Voltage: 3 V
Maximum Drain Current: 45 A Maximum Junction Temperature: 150 °C Total Gate Charge: 40 nC Rise Time: 75 nS Output Capacitance: 400 pF Maximum Drain-Source On-State Resistance: 0.015 Oh
Package: TO-252
توضیحات تکمیلی
| Package | 
				
				 TO-252  | 
		
|---|---|
| کیفیت | 
				
				 original  | 
		
	
				
				
				
				
				
		
		
		
		
		
		
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