TGAN60N60FD TGAN 60N60 TO3PN
Type Designator: TGAN60N60FD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation: 347 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Voltage: 20 V
Maximum Collector Current: 120 A @25℃
– Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
– Maximum G-E Threshold Voltag: 7.5 V
– Maximum Junction Temperature: 150 ℃
– Rise Time, typ: 125 nS
– Output Capacitance, typ: 170 pF
– Total Gate Charge, typ: 150 nC
Package: TO3PN
TGAN60N60FDField Stop Trench IGBTFeatures: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplications :Induction Heating, Soft Switching Application, UPS, Welder, InverterDevice Package Marking RemarkTGAN60N60FD TO-3PN TG
143,000 تومان
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توضیحات
TGAN60N60FDField Stop Trench IGBTFeatures: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplications
توضیحات تکمیلی
| Package |
TO-247 |
|---|---|
| کیفیت |
HIGH COPY |
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محصولات مشابه
00211/ SOT-252 transistor & mosfet
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