IPD26N06S2L-35 (2N06L35) TO252
- 2N06L35 is a N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It is a low-voltage, low-on-resistance, low-gate-charge MOSFET. Description: The 2N06L35 is a N-channel enhancement mode MOSFET with a low-voltage, low-on-resistance, and low-gate-charge. It is designed for use in high-efficiency switching applications. Features: Low-voltage operation Low-on-resistance Low-gate-charge High-efficiency switching RoHS compliant Applications: DC-DC converters Motor control Power management Battery management Automotive applications
- IPG20N06S2L-35OptiMOS Power-TransistorProduct SummaryV 55 VDS4)35mRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level – Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S2L-35
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توضیحات
IPD26N06S2L-35 (2N06L35) TO252
Type Designator: IPG20N06S2L-35
Marking Code: 2N06L35
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 65 W
Maximum Drain-Source Voltage: 55 V
توضیحات تکمیلی
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TO-252 |
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