isc N-Channel MOSFET Transistor 2SK4005-01MRFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Pdⓘ – Maximum Power Dissipation: 70 W

|Vds|ⓘ – Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V

|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 3.5 V

|Id|ⓘ – Maximum Drain Current: 6 A

Tjⓘ – Maximum Junction Temperature: 150 °C

trⓘ – Rise Time: 5.6 nS

Cossⓘ – Output Capacitance: 100 pF

Rdsⓘ – Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO220F