6900GSM AP6900GSM SOP8
Type Designator: AP6900GSM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 1.4(2.2) W
| Maximum Drain-Source Voltage: 30 V
| Maximum Gate-Source Voltage: 20 V
| Maximum Gate-Threshold Voltage: 3 V
| Maximum Drain Current: 5.7(9.8) A
Maximum Junction Temperature: 150 °C
Total Gate Charge: 9 nC
Rise Time: 7(6) nS
Output Capacitance: 160(205) pF
Maximum Drain-Source On-State Resistance: 0.03(0.022) Ohm
Package: SOP8
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توضیحات
Part Number : 6900GSM
Function : 30V, Dual N-Channel MOSFET With Schottky Diode
Package : SO-8 Pin type
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features :
1. Simple Drive Requirement
2. DC-DC Converter Suitable
3. Fast Switching Performanc
توضیحات تکمیلی
| Package |
SOP-8 |
|---|---|
| کیفیت |
original |
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