AP40T03H 40T03GH TO252

Type Designator: AP40T03GH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 31.25 W
| – Maximum Drain-Source Voltage: 30 V

Maximum Gate-Source Voltage: 25 V
| Maximum Gate-Threshold Voltage: 3 V
| Maximum Drain Current: 28 A
Maximum Junction Temperature: 150 °C
Total Gate Charge: 8.8 nC
Rise Time: 62 nS
Output Capacitance: 145 pF
RMaximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO252