IRG7IC28U IRG71C28U TO-220F
Type Designator: IRG7IC28U
Type: IGBT
Type of IGBT Channel: N
– Maximum Power Dissipation: 40 W
| – Maximum Collector-Emitter Voltage: 600 V
| – Maximum Gate-Emitter Voltage: 30 V
– Maximum Collector Current: 25 A @25℃
– Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|- Maximum G-E Threshold Voltag: 4.7
– Maximum Junction Temperature: 150℃
– Rise Time, typ: 35 nS
Output Capacitance, typ: 75 pF
– Total Gate Charge, typ: 70 nC
Package: TO220F
IRG7IC28U is a PDP trench IGBT specially designed for plasma display panels.
316,000 تومان
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توضیحات
IRG7IC28U IRG71C28U TO-220F ORIGINAL
Insulated Gate Bipolar transistor, like any other transistor it can be used for switching or amplification of electrical signals. They usually have three terminals called Gate, Collector and Emitter. In trench Gate IGBTs Gate is buried in the trench of silicon and hence a vertical gate channel is produced.
IRG7IC28U is a PDP trench IGBT specially designed for plasma display panels. The device utilizes advanced trench technology, ability to handle high temperature and repetitive peak current capability makes this device suitable for professional detailed product applications.
Features of IRG7IC28U
- Advanced trench IGBT technology
- Optimized for sustain and energy recovery circuit in PDP applications
- Low VCE(on) and energy per pulse
- High repetitive peak current capability
- Lead free package
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توضیحات تکمیلی
| کیفیت |
original |
|---|---|
| Package |
TO-220 |
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