MJD3055G Code: J3055G TO-252
Type Designator: MJD3055G
SMD Transistor Code: J3055G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: –
Package: TO-252
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توضیحات
Complementary Power
Transistors
DPAK For Surface Mount Applications
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to MJE2955 and MJE3055
DC Current Gain Specified to 10 Amperes
High Current Gain−Bandwidth Product − fT = 2.0 MHz (Min) @ IC
= 500 mAdc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Packages
توضیحات تکمیلی
| Package |
TO-252 |
|---|---|
| کیفیت |
original |
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