RJP30H2 TO220F
RJP30H2 TO220F ORIGINALLY
TYPE : Silicon N Channel IGBT High speed power switching Vces = 360V IC = 35A
Description
RJP30H2A is Silicon N-Channel IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
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توضیحات
RJP30H2 TO220F ORIGINALLY
TYPE : Silicon N Channel IGBT High speed power switching Vces = 360V IC = 35A
Features
1. Trench gate and thin wafer technology (G6H-II series)
2. Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
3. High speed switching: tf = 100 ns typ, tf = 180 ns typ
4. Low leak current: ICES = 1 µA max
Absolute maximum ratings ( Ta=25°C )
1. Type of IGBT Channel : N-Channel
2. Maximum Power Dissipation (Pc), W: 60
3. Maximum Collector-Emitter Voltage |Vce|, V: 360
4. Collector-Emitter saturation Voltage |Vcesat|, V: 1.9
5. Maximum Gate-Emitter Voltage |Veg|, V: 30
6. Maximum Collector Current |Ic|, A: 35
7. Maximum Junction Temperature (Tj), °C: 150
8. Maximum Collector Capacity (Cc), pF: 60
توضیحات تکمیلی
| Package |
TO-220 |
|---|---|
| کیفیت |
original |
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