60R580P TO252
60R580P TO252
60R580P Transistor Mosfet Canal N 650v 8a TO-252
SMN630LD Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage: BV =200V (Min.) DSS Low gate charge: Q =12nC (Typ.) g Low drain-source On-Resistance: R =0.34 (Typ.) DS(on)D 100% avalanche tested RoHS compliant device Ordering Information G S Part Number Marking Package TO-252 SMN630LD SMN630L TO
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توضیحات
60R580P TO252
Type Designator: MMIS60R580P
Marking Code: 60R580P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
– Maximum Power Dissipation: 70 W
| – Maximum Drain-Source Voltage: 600 V
| Maximum Gate-Source Voltage: 30 V
|Maximum Gate-Threshold Voltage: 4 V
| Maximum Drain Current: 8 A
Maximum Junction Temperature: 150 °C
Total Gate Charge: 18 nC
Rise Time: 34 nS
Output Capacitance: 428 pF
Maximum Drain-Source On-State Resistance: 0.53 Ohm
Package: TO252
توضیحات تکمیلی
| کیفیت |
original |
|---|---|
| Package |
TO-252 |
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