60R580P TO252
60R580P TO252
60R580P Transistor Mosfet Canal N 650v 8a TO-252
MMP60R580P is power MOSFET using Magnachip’s advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
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توضیحات
60R580P TO252
Type Designator: MMIS60R580P
Marking Code: 60R580P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
– Maximum Power Dissipation: 70 W
| – Maximum Drain-Source Voltage: 600 V
| Maximum Gate-Source Voltage: 30 V
|Maximum Gate-Threshold Voltage: 4 V
| Maximum Drain Current: 8 A
Maximum Junction Temperature: 150 °C
Total Gate Charge: 18 nC
Rise Time: 34 nS
Output Capacitance: 428 pF
Maximum Drain-Source On-State Resistance: 0.53 Ohm
Package: TO252
توضیحات تکمیلی
| کیفیت |
original |
|---|---|
| Package |
TO-252 |
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