AP4957AGM 4957AGM SOP8

Type Designator: AP4957AGM

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Pdⓘ – Maximum Power Dissipation: 2 W

|Vds|ⓘ – Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V

|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 3 V

|Id|ⓘ – Maximum Drain Current: 7.4 A

Tjⓘ – Maximum Junction Temperature: 150 °C

Qgⓘ – Total Gate Charge: 16 nC

trⓘ – Rise Time: 6.5 nS

Cossⓘ – Output Capacitance: 190 pF

Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: SO8