APM4018N TO252
APM4018N TO252
APM4018NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/60A,DRDS(ON)=6.5m (typ.) @ VGS=10VGRDS(ON)=9.5m (typ.) @ VGS=4.5VS Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Desktop Computer orSDC/DC ConvertersN-Channel MOSFETO
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توضیحات
APM4018N TO252
Type Designator: APM4018NU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 50 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ – Maximum Drain Current: 60 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 50 nC
trⓘ – Rise Time: 11 nS
Cossⓘ – Output Capacitance: 250 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO252
توضیحات تکمیلی
| Package |
TO-252 |
|---|---|
| کیفیت |
original |
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