JCS7N65SB TO263

Type Designator: JCS7N70S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
– Maximum Power Dissipation: 120 W
|– Maximum Drain-Source Voltage: 700 V
| – Maximum Gate-Source Voltage: 30 V
| – Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ – Maximum Drain Current: 7 A
– Maximum Junction Temperature: 150 °C
– Total Gate Charge: 31 nC
– Rise Time: 35 nS
– Output Capacitance: 125 pF
– Maximum Drain-Source On-State Resistance: 1.6 Ohm