توضیحات

SM3106NSU К-252 ORIGINAL

Type Designator: SM3106NSU

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Pdⓘ – Maximum Power Dissipation: 50 W

|Vds|ⓘ – Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V

|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 2.5 V

|Id|ⓘ – Maximum Drain Current: 83 A

Tjⓘ – Maximum Junction Temperature: 150 °C

Qgⓘ – Total Gate Charge: 22 nC

trⓘ – Rise Time: 15 nS

Cossⓘ – Output Capacitance: 460 pF

Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: TO252