SMK830 TO-220F
Type Designator: SMK830
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 70 W
| Maximum Drain-Source Voltage: 500 V
| Maximum Gate-Source Voltage: 30 V
| Maximum Gate-Threshold Voltage: 4 V
| Maximum Drain Current: 4.5 A
Maximum Junction Temperature: 150 °C
Total Gate Charge: 16 nC
Rise Time: 46 nS
Output Capacitance: 82 pF
Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220AB
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توضیحات
SMK830 TO-220F ORIGINAL
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
The SMK830 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the SMK830P transistor as follows.
توضیحات تکمیلی
| Package |
TO-220 |
|---|---|
| کیفیت |
new orig |
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