60R580P MMF60R580P TO220 ORIGINAL
Features
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package – Pb Free Plating, Halogen Free
Key Parameters
Ordering Information
Applications
PFC Power Supply Stages
Switching Applications
Adapter
Motor Control
DC – DC Converters
MMF60R580P – MOSFET N 600V 8A 26W 0.58R TO220F Type Designator: MMF60R580PTH SMD Transistor Code: 60R580P Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 26 W Maximum Drain-Source Voltage |Vds|: 600 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 8 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 18 nC Rise Time (tr): 34 nS Drain-Source Capacitance (Cd): 428 pF Maximum Drain-Source On-State Resistance (Rds): 0.58 Ohm Package: TO-220F
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توضیحات
60R580P MMF60R580P TO220 ORIGINAL
MMF60R580P – MOSFET N 600V 8A 26W 0.58R TO220F
MMF60R580P is power MOSFET using Magnachip’s advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
توضیحات تکمیلی
Package |
TO-220 |
---|---|
کیفیت |
original |
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