23N50E 23N50E TO3P
23N50E 23N50E TO3P
Type Designator: FMH23N50E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
– Maximum Power Dissipation: 315 W
– Maximum Drain-Source Voltage: 500 V
– Maximum Gate-Source Voltage: 30 V
| – Maximum Gate-Threshold Voltage: 3.5 V
– Maximum Drain Current: 23 A
– Maximum Junction Temperature: 150 °C
– Total Gate Charge: 93 nC
– Rise Time: 13 nS
– Output Capacitance: 330 pF
– Maximum Drain-Source On-State Resistance: 0.245 Ohm
Package: TO3P
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توضیحات
Mosfet Igbt 23n50e 500 V 23a To247
FMH23N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-3P(Q)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)
توضیحات تکمیلی
| کیفیت |
HIGH COPY |
|---|---|
| Package |
TO-247 |
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