AOD425 D425 TO-252
AOD425P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD425 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge VDS (V) = -30Vwith a 25V gate rating. This device is suitable for use ID = -50A (VGS = -10V)as a load switch or in PWM applications. The device is RDS(ON)
Transistor: P-MOSFET; unipolar; -30V; -8.9A; 25W; TO252
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توضیحات
AOD425
P-Channel Enhancement Mode Field Effect Transisto
The AOD425 uses advanced trench technology to
provide excellent RDS(ON) and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use
as a load switch or in PWM applications. The device is
ESD protected.
Type Designator: AOD425 Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation: 50 W
Maximum Drain-Source Voltage: 30 V Maximum Gate-Source Voltage: 25 V Maximum Gate-Threshold Voltage: 3.5 V Maximum Drain Current: 40 A
Maximum Junction Temperature: 175 °C Total Gate Charge: 40 nC Rise Time: 8 nS Output Capacitance: 360 pF Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: to-252
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