B414 AOB414 TO-263
The AOB414/L is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.AOB414 and AOB414L are electrically
identical.
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توضیحات
Type Designator: AOB414 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation: 150 W
Maximum Drain-Source Voltage: 100 V Maximum Gate-Source Voltage: 25 V Maximum Gate-Threshold Voltage: 4 V Maximum Drain Current: 51 A
Maximum Junction Temperature: 175 °CRise Time: 4 nS Output Capacitance: 165 pF Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO-263
AOB414TMN-Channel SDMOS Power TransistorGeneral Description Product SummaryVDS100VThe AOB414/L is fabricated with SDMOSTM trench ID (at VGS=10V) 51Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
توضیحات تکمیلی
| Package |
TO-263 |
|---|---|
| کیفیت |
original |
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