FQP6N60 6N60 TO-220
Type Designator: FQP6N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 130 W
Maximum Drain-Source Voltage: 600 V
Maximum Gate-Source Voltage: 30 V
| Maximum Gate-Threshold Voltage: 5 V
| Maximum Drain Current: 6.2 A
Maximum Junction Temperature: 150 °C
Total Gate Charge: 20 nC
Rise Time: 70 nS
Output Capacitance: 95 pF
Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220
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توضیحات
FQPF6N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 600V,
RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 7 pF)This advanced technology has been especially tailored to
توضیحات تکمیلی
| Package |
TO-220 |
|---|---|
| کیفیت |
HIGH COPY |
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