FQPF6N60C 6N60 TO220F
FQPF6N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 7 pF)This advanced technology has been especially tailored to
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توضیحات
Type Designator: FQPF6N60C Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 40 W|Maximum Drain-Source Voltage: 600 V Maximum Gate-Source Voltage: 30 Maximum Gate-Threshold Voltage: 4 VMaximum Drain Current: 5.5 A
Maximum Junction Temperature: 150 °CTotal Gate Charge: 16 nC Rise Time: 45 nS Output Capacitance: 65 pFMaximum Drain-
Source On-State Resistance: 2 Ohm
Package: TO-220F
توضیحات تکمیلی
| Package |
TO-220 |
|---|---|
| کیفیت |
HIGH COPY |
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