M29F400BB 70M1 44-SOIC

4 Mbit 256Kb x16, Boot Block) single supply Flash memory

Single ± 10% supply voltage for program, erase and read operations Access time: 45 ns Programming time 8 µs per Byte/Word typical 11 memory blocks ­ 1 Boot Block (Top or Bottom Location) ­ 2 Parameter and 8 Main Blocks Program/erase controller ­ Embedded Byte/Word Program algorithm ­ Embedded Multi-Block/Chip Erase algorithm ­ Status Register Polling and Toggle Bits ­ Ready/Busy Output Pin Erase Suspend and Resume modes ­ Read and Program another Block during Erase Suspend Unlock Bypass Program command ­ Faster Production/Batch Programming Temporary block unprotection mode Low power consumption ­ Standby and Automatic Standby 100,000 program/erase cycles per block 20-year data retention ­ Defectivity below 1 ppm/year