MMD50R380PRH 50R380 TO-252
MMD50R380P is power MOSFET using Magnachip’s advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss
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توضیحات
MMD50R380PRH 50R380 TO-252 ORIGINAL
Type Designator: MMD50R380PRH
Marking Code: 50R380
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ – Maximum Power Dissipation: 83 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ – Maximum Drain Current: 11 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 21.8 nC
trⓘ – Rise Time: 32 nS
Cossⓘ – Output Capacitance: 357 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-252
توضیحات تکمیلی
Package |
TO-252 |
---|---|
کیفیت |
original new |
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