MMD65R600Q TO-252
MMD65R600Q Datasheet MMD65R600Q 650V 0.60 N-channel MOSFET Description MMD65R600Q is power MOSFET using MagnaChips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as l
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توضیحات
MMD65R600Q TO-252 original
Type Designator: MMD65R600QRH
Marking Code: 65R600Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 62.5 W
| Maximum Drain-Source Voltage: 650 V
| Maximum Gate-Source Voltage: 30 V
|Maximum Gate-Threshold Voltage: 4 V
| Maximum Drain Current: 7.3 A
Maximum Junction Temperature: 150 °C
Total Gate Charge: 13.8 nC
Rise Time: 33 nS
Output Capacitance: 640 pF
Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-252
توضیحات تکمیلی
| Package |
TO-252 |
|---|---|
| کیفیت |
original |
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