P6006HV SOP8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 2 W
| Maximum Drain-Source Voltage: 60 V
| Maximum Gate-Source Voltage: 20 V
| Maximum Gate-Threshold Voltage: 2.5 V
| Maximum Drain Current: 4.5 A
Maximum Junction Temperature: 150 °C
Total Gate Charge: 12 nC
Rise Time: 8 nS
Output Capacitance: 80 pF
Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOP8
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توضیحات
P6006HV SOP8
Type Designator: P6006HV
Application Introduction:
P3004ND5G-VB is an N+P channel MOSFET (N-channel and P-channel hybrid metal oxide semiconductor field effect transistor) suitable for a variety of electronic applications, including those requiring bipolar current handling capability.
P3004ND5G-VB is a versatile N+P channel MOSFET suitable for a variety of electronic applications requiring bipolar current handling capability, low resistance and high withstand voltage. It has a wide range of uses in modules such as motor drives, battery management, power inverters and power switch modules.
توضیحات تکمیلی
| Package |
SOP-8 |
|---|---|
| کیفیت |
original |
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