2SK4075B TO252
2SK4075B TO252 ORIGINAL
SWITCHING
N-CHANNEL POWER MOS FET
Type Designator: 2SK4075B
Type of Transistor: MOSFET
2SK4213 K4213 TO252
2SK4213 K4213 TO252
30F133 TO252
Maximum Power Dissipation: 60 W
| Maximum Collector-Emitter Voltage: 330 V
| Maximum Collector Current: 30 A @25
Collector-Emitter saturation Voltage, typ: 2.3 V @25
Maximum Junction Temperature: 150
Package: TO-252
3120KM SMD TO-252
3120KM SMD TO-252
The SI-3120KM from Sanken Electric is a PMIC with Supply Voltage 35 V, Output Current 1 A. Tags: Surface Mount
3BR1565JF TO220-6
3BR1565JF TO220-6 ORJINAL
Part Number : 3BR1565
Function : SMPS Current Mode Controller
Package : TO220 6PIN Type
4511GH AP4511GH TO252-4
AP4511GH RoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD1/D2 Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 15AS1G1P-CH BVDSS -35VS2G2RDS(ON) 48mTO-252-4LDescription ID -12AAdvanced Power MOSFETs from APEC provide theD1D2designer with
4513GH TO-252-4L
AP4513GH RoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 35VD1/D2 Good Thermal Performance RDS(ON) 42m Fast Switching Performance ID 10AS1G1P-CH BVDSS -35VS2G2RDS(ON) 75mTO-252-4LDescription ID -8AAdvanced Power MOSFETs from APEC provide thedesigner with the best
45F122 GT45F122 TO-220F
45F122 GT45F122 TO-220F ORIGINAL
Part Number: 45F122, GT45F122
Function: 300V, 200A, Silicon N-Channel IGBT
Package: TO220SIS
Breakdown Voltage VCES (V) @Ta = 25˚C = 300V
IGBT Current Rating IC (A) @Ta = 25˚C : 200A
5N52U STF5N52U TO-220
STD5N52U, STF5N52UN-channel 525 V, 1.25 typ., 4.4 A UltraFASTmesh Power MOSFETs in DPAK and TO-220FP packagesDatasheet – production dataFeatures Order codes VDS RDS(on) max ID PTOTSTD5N52U 70 W525 V 1.5 4.4 ATABSTF5N52U 25 W3 Outstanding dv/dt capability1 321 Gate charge minimizedDPAK Very low intrinsic capacitancesTO-220FP Very low RD
60R580P MMF60R580P TO220
Applications
PFC Power Supply Stages
Switching Applications
Adapter
Motor Control
DC – DC Converters
60R580P TO252
60R580P TO252
60R580P Transistor Mosfet anal N 650v 8a TO-252
MMP60R580P is power MOSFET using Magnachip’s advanced super junction technology that can
realize very low on-resistance and gate charge.
61FC4 EA61FC4 TO-252
The EA61FC4-F from Kyocera AVX is a Power Diode with Forward Current 6.0 A, Forward Voltage 1.25 V, Reverse Current 20 uA, Repetitive Peak Reverse Voltage 400 V, Non-Repetitive Peak Forward Current 45 A. Tags: Surface Mount. More details for EA61FC4-F can be seen below