FDV303N SOT-23
FDV303N SOT-23
Features
• 25 V, 0.68 A Continuous, 2 A Peak
♦ RDS(ON) = 0.45 Ω @ VGS = 4.5 V
♦ RDS(ON) = 0.6 Ω @ VGS= 2.7 V
• Very Low Level Gate Drive Requirements Allowing Direct Operation
in 3 V Circuits, VGS(th) < 1 V
• Gate−Source Zener for ESD Ruggedness, > 6 kV Human Body
Model
• Compact Industry Standard SOT−23 Surface Mount Package
• This Device i
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توضیحات
FDV303N SOT-23
General Description
These N−Channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS
technology. This very high density process is tailored to minimize
on−state resistance at low gate drive conditions. This device is
designed especially for application in battery circuits using either one
lithium or three cadmium or NMH cells. It can be used as an inverter
or for high−efficiency miniature discrete DC/DC conversion in
compact portable electronic devices like cellular phones and pagers.
This device has excellent on−state resistance even at gate drive
voltages as low as 2.5 V.
توضیحات تکمیلی
| Package |
SOT23 3PIN |
|---|---|
| کیفیت |
original |
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