FQPF10N60C 10N60 TO220F
FQPF10N60C600V N-Channel MOSFETFeatures Description 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 44 nC)DMOS technology. Low Crss ( typical 18 pF)This advanced technology has been especiall
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توضیحات
Type Designator: FQPF10N60C Type of Transistor: MOSFET
Type of Control Channel: N -Channel Maximum Power Dissipation: 50 WMaximum Drain-Source Voltage: 600 V| Maximum Gate-Source Voltage: 30 VMaximum Gate-Threshold Voltage: 4 V| Maximum Drain Current: 9.5 A
Maximum Junction Temperature: 150 °C Total Gate Charge: 44 nC
Maximum Drain-Source On-State Resistance: 0.73 Ohm
Package: TO-220F
توضیحات تکمیلی
| Package |
TO-220 |
|---|---|
| کیفیت |
HIGH COPY |
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