P4004ED TO-252

Type Designator: P4004ED

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation: 30 W

| Maximum Drain-Source Voltage: 40 V

| Maximum Gate-Source Voltage: 20 V

| Maximum Gate-Threshold Voltage: 3 V

| Maximum Drain Current: 21 A

Maximum Junction Temperature: 150 °C

Total Gate Charge: 17 nC

– Rise Time: 16 nS

– Output Capacitance: 175 pF

– Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO252