SM1F02N TO252

Type Designator: SM1F02NSF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 113 W
| Maximum Drain-Source Voltage: 150 V
| Maximum Gate-Source Voltage: 25 V
|Maximum Gate-Threshold Voltage: 4 V
| Maximum Drain Current: 35 A
Maximum Junction Temperature: 150 °C
Total Gate Charge: 37 nC
Rise Time: 7 nS
Output Capacitance: 200 pF
Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: t0-252