



SPW11N80C3 TO-247
SPW11N80C3 TO-247 ORIGINAL
Type Designator: SPW11N80C3
Marking Code: 11N80C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation: 156 W
|Maximum Drain-Source Voltage: 800 V
|Maximum Gate-Source Voltage: 20 V
| Maximum Gate-Threshold Voltage: 3.9 V
| Maximum Drain Current: 11 A
Maximum Junction Temperature: 150 °C
Total Gate Charge: 64 nC
Rise Time: 15 nS
Output Capacitance: 65 pF
Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO-247
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توضیحات
CoolMOSTM Power Transistor
N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 Infineon SPW11N80C3FKSA1
Features
• New revolutionary high voltage technology• Extreme dv/dt rated• High peak current capability
• Qualified according to JEDEC1) for target applications• Pb-free lead plating; RoHS compliant• Ultra low gate charge• Ultra low effective capacitances
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
توضیحات تکمیلی
Package |
TO-247 |
---|---|
کیفیت |
original |
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