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P3004ND5G TO-252-5 ORIGINAL
P3004ND5G TO-252-5 ORIGINAL
Type Designator: P3004ND5G
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ – Maximum Power Dissipation: 3 W
|Vds|ⓘ – Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ – Maximum Drain Current: 12 A
Tjⓘ – Maximum Junction Temperature: 150 °C
Qgⓘ – Total Gate Charge: 12 nC
trⓘ – Rise Time: 5.6 nS
Cossⓘ – Output Capacitance: 110 pF
Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO252-5
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توضیحات
P3004ND5G TO-252-5 ORIGINAL
Application Introduction:
P3004ND5G-VB is an N+P channel MOSFET (N-channel and P-channel hybrid metal oxide semiconductor field effect transistor) suitable for a variety of electronic applications, including those requiring bipolar current handling capability.P3004ND5G-VB is a versatile N+P channel MOSFET suitable for a variety of electronic applications requiring bipolar current handling capability, low resistance and high withstand voltage. It has a wide range of uses in modules such as motor drives, battery management, power inverters and power switch modules.
P3004ND5G-VB is an N+P channel MOSFET (N-channel and P-channel hybrid metal oxide semiconductor field effect transistor) suitable for a variety of electronic applications, including those requiring bipolar current handling capability.P3004ND5G-VB is a versatile N+P channel MOSFET suitable for a variety of electronic applications requiring bipolar current handling capability, low resistance and high withstand voltage. It has a wide range of uses in modules such as motor drives, battery management, power inverters and power switch modules.
توضیحات تکمیلی
| Package |
TO-252 |
|---|---|
| کیفیت |
original |
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