TIP142 TO-247
TIP142 TO-247
Type Designator: TIP142
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 500
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توضیحات
TIP142 TO-247
Complementary power Darlington transistors
Features
■ Monolithic Darlington configuration
■ Integrated antiparallel collector-emitter diode
Applications
■ Linear and switching industrial equipment
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
performance coupled with very low saturation
voltage
توضیحات تکمیلی
| کیفیت |
HIGH COPY |
|---|---|
| Package |
TO-247 |
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محصولات مشابه
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